| PART |
Description |
Maker |
| PE15A1005 |
40 dB Gain, 1.5 dB NF, 15 dBm, 1.2 GHz to 1.4 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| PE15A1010 |
40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| RFMA0912-1W-Q7 |
9.50 - 11.70 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA1720-0.5W-Q7 |
17.7 - 19.7 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA7090-1W-Q7 |
7.0 - 9.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| CGD1044H CGD1044H-2015 |
1 GHz, 25 dB gain high output power doubler
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| LD7260 |
6 GHz / 2.25 kW CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 2.25 kW CW PPM FOCUSING HIGH POWER GAIN
6 GHz, 2.25 kW CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC[NEC]
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
|
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
| CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
