| PART |
Description |
Maker |
| M85049-92-09J M85049-92-09M M85049-92-09T M85049-9 |
Composite Strain Reliefs Self-Locking
|
Glenair, Inc.
|
| 319FS137XN20 319FS137XN22 319FS137XN24 319FB137XMT |
Composite Shield Sock Strain Relief
Composite Shield Sock Strain Relief
|
Glenair, Inc.
|
| 3-100103-4 |
Accessories ( AMP-LATCH ); 34P.A/L.STRAIN REL. ( AMP )
|
Tyco Electronics
|
| XP01112 XP1112 XP01112XP1112 |
XP01112 (XP1112) - Composite Transistors
SILICON PNP EPITAXIAL PLANER TRANSISTOR
Composite Device - Composite Transistors
|
PANASONIC[Panasonic Semiconductor]
|
| OM100Q05CB OM100Q80XX OM100Q05DB OM100Q05RB OM100Q |
50 A, SILICON, RECTIFIER DIODE
600V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
300V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
700V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
500V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
400V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
200V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
150V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
100V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
800V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
100 AMP ULTRA FAST CENTER-TAP IN HERMETIC ISOLATED POWER BLOCK PACKAGE
|
International Rectifier
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
http://
|
| AM29DL162DT120WCE AM29DL162DT120WCEN AM29DL163DB12 |
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6792 with Standard Packaging
x8/x16 Flash EEPROM
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRLF120 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A IRF460 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF310 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY140CM with Standard Packaging
60V Single N-Channel Hi-Rel MOSFET in a D3 package; A IRFMJ044 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY9140CM with Standard Packaging x8/x16闪存EEPROM
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5YZ48CM with Standard Packaging x8/x16闪存EEPROM
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6786 with Standard Packaging EEPROM
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5Y9540CM with Standard Packaging x8/x16闪存EEPROM
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package; A IRF9130 with Standard Packaging x8/x16闪存EEPROM
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6782U with Standard Packaging x8/x16闪存EEPROM
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAG40 with Standard Packaging EEPROM
|
PLX Technology, Inc.
|
| XN04215 XN4215 |
Composite Device - Composite Transistors
Silicon NPN epitaxial planer transistor
|
PANASONIC[Panasonic Semiconductor]
|
| XN1C301 XN0C301 |
Composite Device - Composite Transistors
Silicon PNP epitaxial planer transistor (Tr1)
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| XN05553 XN5553 |
Composite Device - Composite Transistors
From old datasheet system
Silicon NPN epitaxial planer transistor
|
PANASONIC[Panasonic Semiconductor]
|
| XN0111H |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XP0111F |
Composite Device - Composite Transistors 复合设备-复合晶体
|
IRC Advanced Film
|
