| PART |
Description |
Maker |
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| EIB1718-1P |
17.7-18.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1819-2P EIB1819-2P |
18.7-19.7GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1718-2P |
17.7-18.7GHz, Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7177A C367177A |
From old datasheet system
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
| SP8855D SP8855DIGHCAR SP8855DKGHCAR |
1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER
1.7GHz Parallel Load Professional Synthesizer
|
Zarlink Semiconductor Inc.
|
| BFG135 |
NPN 7GHz wideband transistor
|
Philips Semiconductors
|
