| PART |
Description |
Maker |
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIC0910A-8 |
9.20-10.00 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC4853-25 |
4.8-5.30 GHz 25-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC36V5258 |
5.2-5.8 GHz BAND 4W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| EID1112A1-8 |
11.70-12.70 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC39V5258 MGFC39V5258A |
5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| EIC5972-12 |
5.90-7.20 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1111-2 |
11.0-11.5 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1415A1-5 |
14.40-15.35 GHz 5-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1010-25 |
10.0-10.25 GHz 25-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC8596-2 EIC8596-2NH |
8.50-9.60 GHz 2-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
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