| PART |
Description |
Maker |
| HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
| HM5112805LTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Renesas Technology / Hitachi Semiconductor
|
| HM5117805LJ-7 HM5117805LJ-6 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
|
Elpida Memory, Inc.
|
| HM5118165TT-5 HM5118165TT-6 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
|
Hitachi Semiconductor
|
| HM5212325F HM5212325F-B60 HM5212325FBP-B60 |
128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
INFRARED LIGHT EMITTING DIODE
LED ORANGE J-TYPE SMD TAPE/REEL 128M的LVTTL接口SDRAM00兆赫1 - Mword × 32位4个银行PC/100 SDRAM
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| HM51W16405TS-5 HM51W16405TS-6 HM51W16405TS-7 HM51W |
16 M EDO DRAM (4-Mword ′ 4-bit) 4 k Refresh/2 k Refresh
16 M EDO DRAM (4-Mword 垄楼 4-bit) 4 k Refresh/2 k Refresh
|
Elpida Memory
|
| HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 |
2M X 64 EDO DRAM MODULE, 60 ns, ZMA144
4M X 64 EDO DRAM MODULE, 60 ns, ZMA144
144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density
2M x 64 Bit EDO DRAM Module (SO-DIMM)...
4M x 64 Bit EDO DRAM Module (SO-DIMM)...
|
INFINEON TECHNOLOGIES AG
|
| HM5165805F HM5165805FJ HM5164805FLJ HM5165805FTT H |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh 64目等内存 Mword × 8位）8亩刷 4亩刷
(HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
http://
Hitachi Semiconductor
Hitachi,Ltd.
|
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
