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APT54GA60B - High Speed PT IGBT

APT54GA60B_4522363.PDF Datasheet


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BUP200D Q67040-A4420-A2 BUP200-D IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) 3.6 A, 1200 V, N-CHANNEL IGBT, TO-220AB
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流闭锁免费
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
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IXYS, Corp.
IXYS[IXYS Corporation]
MG300Q2YS65H 300 A, 1200 V, N-CHANNEL IGBT
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Toshiba Semiconductor
Toshiba Corporation
IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
IXYS, Corp.
IXYS[IXYS Corporation]
IXGM25N100A IXGP12N100 Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
IXYS, Corp.
IXSM30N60A IXSH30N60 IXSH30N60A IXSM30N60 Low VCE(sat) IGBT, High Speed IGBT
IXYS[IXYS Corporation]
BUP306D Q67040-A4222-A2 BUP306-D IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
IR2308 IR2308S High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
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IXSH30N60U1 IXSH30N60AU1 From old datasheet system
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability
IXYS[IXYS Corporation]
Q67078-A4400-A2 BUP200 BUP200SMD IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
APT46GA90JD40 High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
Microsemi Corporation
Microsemi, Corp.
 
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