| PART |
Description |
Maker |
| W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240
256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240
64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc.
XILINX INC
|
| HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| V58C2256324SHUR4E V58C2256324SHUR6E V58C2256324SHU |
8M X 32 DDR DRAM, PBGA60 ROHS COMPLIANT, MO-233, FBGA-60
64M X 4 DDR DRAM, PBGA60
|
ProMOS Technologies, Inc.
PROMOS TECHNOLOGIES INC
|
| HYMD564646AL8-H HYMD564646AL8-K HYMD564646A8-H HYM |
Unbuffered DDR SDRAM DIMM
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| NANYATECHNOLOGYCORP-NT5TU64M16GG-BE NT5TU64M16GG-A |
64M X 16 DDR DRAM, 0.4 ns, PBGA84
|
NANYA TECHNOLOGY CORP
|
| IS43DR16640A-3DBLI |
64M X 16 DDR DRAM, 0.45 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
| HY5PS12821F-Y6 |
64M X 8 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU12422ALT-D4 HY5DU12822ALT-D4 |
128M X 4 DDR DRAM, 0.7 ns, PDSO66
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification
|
Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| NT512MD72S89B0GY-5T |
64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
NANYA TECHNOLOGY CORP
|
| HYS64D64300HU-6-B |
64M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
INFINEON TECHNOLOGIES AG
|
|
