| PART |
Description |
Maker |
| OA100FL16 OA100FL18 OA100NL15 OA100NL19 CA25FL20 C |
1 ELEMENT, 18000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 46000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 16000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 830 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 130000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7400000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 180000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 40000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 280000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 31000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 260000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 11000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 830000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2300000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1100000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3200000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 35000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7700 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6300000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 11000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2600000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4200000 uH, GENERAL PURPOSE INDUCTOR
|
|
| 2N4264 2N4264-D |
General Purpose Transitor NPN Silicon
General Purpose Transistor(NPN Silicon)
|
ONSEMI[ON Semiconductor]
|
| 2N4123 2N4124 2N4123-D 2N4123RLRA 2N4123RLRM |
General Purpose Transistors NPN Silicon
General Purpose Transistors(NPN Silicon)
General Purpose Transistor - NPN
|
ONSEMI[ON Semiconductor]
|
| EC30AL32-5.36MH EC30AL30-1.87MH EC30AL31-3.83MH EC |
1 ELEMENT, 5360 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1870 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3830 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4020 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3240 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1430000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 118000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2490 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 53600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 19600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 24300 uH, GENERAL PURPOSE INDUCTOR
|
|
| 2SC5658M3T5G |
NPN Silicon General Purpose Amplifier Transistor
SOT723 General Purpose Transistor
|
VAISH[Vaishali Semiconductor]
ON SEMICONDUCTOR
|
| 2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|36
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器，噪声抑制应用的NPN硅外延平面型晶体
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd.
Sanyo Electric Co.,Ltd.
|
| 2N3704_02 2N3704 2N3704D27Z 2N3704D75Z 2N3704D74Z |
NPN Epitaxial Silicon Transistor
NPN General Purpose Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2N3904RLRPG 2N3904H 2N390310 |
General Purpose Transistors NPN Silicon 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| U07-17 U07-24 U07-38 U07-19 PSC10-19 PSC10-D-11 PS |
1 ELEMENT, 175000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 600000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 240000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 120000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 430000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 72000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 36000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 360000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
|
| BCW60A |
NPN General Purpose Transistors
NPN epitaxial silicon transistor. Collector-base voltage VCBO 32 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| CR12-120 CR12-010 CR16-020 CR12-020 CR20-040 CR16- |
Rectifiers, General Purpose 12 A, 1200 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 12 A, 100 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 16 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 20 A, 400 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
16 A, 600 V, SILICON, RECTIFIER DIODE, DO-4
16 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
|
Central Semiconductor, Corp.
Vishay Intertechnology, Inc.
CENTRAL SEMICONDUCTOR CORP
|
|
