PART |
Description |
Maker |
SST29EE020-150-4C-EH SST29LE020-250-4C-EH SST29VE0 |
x8 EEPROM 4 Mbit (512K x 8/256K x 16) nvSRAM x8的EEPROM 1 Mbit (128K x 8) nvSRAM x8的EEPROM
|
TE Connectivity, Ltd. Silicon Storage Technology, Inc.
|
CY14B101LA-SP45XI CY14B101LA-SP45XIT CY14B101LA-BA |
1 Mbit (128K x 8/64K x 16) nvSRAM; Organization: 128Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: SSOP 128K X 8 NON-VOLATILE SRAM, 45 ns, PDSO48
|
Cypress Semiconductor, Corp.
|
CY14B101L09 CY14B101L-SP35XC CY14B101L-SP35XI CY14 |
1 Mbit (128K x 8) nvSRAM
|
Cypress Semiconductor
|
CY14B101LA-ZS25XI CY14B101LA-ZS25XIT CY14B101LA-ZS |
1 Mbit (128K x 8) nvSRAM
|
Cypress Semiconductor
|
CY14B101P-SFXI CY14B101P-SFXC CY14B101P-SFXCT CY14 |
1 Mbit (128K x 8) Serial SPI nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
CY14B101L-SZ35XC |
1 Mbit (128K x 8) nvSRAM; Organization: 128Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: SOIC
|
CYPRESS SEMICONDUCTOR CORP
|
CY14B101MA-ZSP25XIT CY14B101MA-ZSP45XI |
1 Mbit (128K x 8/64K x 16) nvSRAM with Real Time Clock; Organization: 64Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: TSOP 64K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54
|
CYPRESS SEMICONDUCTOR CORP
|
SST29VE010-200-4I-NHE SST29EE010-70-4I-EHE |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
STK14CA808 STK14CA8-RF25ITR STK14CA8-NF35ITR STK14 |
128K X 8 NON-VOLATILE SRAM, 25 ns, PDSO48 128Kx8 Autostore nvSRAM 128K X 8 NON-VOLATILE SRAM, 25 ns, PDSO32 128Kx8 Autostore nvSRAM
|
Simtek Corporation
|
CY62137CV30LL-55BVXI CY62137CV30LL-70BAE CY62137CV |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp.
|
CY7C1231H-133AXI CY7C1231H-133AXC |
2-Mbit (128K x 18) Flow-Through SRAM with NoBLArchitecture 2-Mbit (128K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
|
CY14B108L-ZS45XI CY14B108L-ZS45XIT |
8-Mbit (1024 K 8/512 K 16) nvSRAM
|
Cypress
|