| PART |
Description |
Maker |
| HY27SS08561M HY27US16561M |
(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
Hynix Semiconductor
|
| H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-K3M H5 |
256Mb (16Mx16bit) Mobile DDR SDRAM
|
Hynix Semiconductor
|
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| HY5Y7A2DLM HY5Y7A2DLMP-HF |
Mobile SDR - 512Mb
|
Hynix Semiconductor
|
| HY27US08561A HY27US16561A HY27SS08561A HY27SS16561 |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| K4N56163QF-GC37 K4N56163QF K4N56163QF-GC K4N56163Q |
256Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J5 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| M58LR128GU M58LR256GL |
128 and 256Mbit 1.8V supply Flash memories
|
STMicroelectronics
|
| HYB18T256400AF-5 HYB18T256800AF-5 HYB18T256400AF-3 |
256Mbit Double Data Rate (DDR2) Component
|
Infineon
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
