PART |
Description |
Maker |
ML74WLAB |
NAND Gate (unbuffered) and NOR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
ML74WLBE |
NOR Gate (unbuffered) and OR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
ML74WLBF |
NOR Gate (unbuffered) and Buffer
|
Minilogic Device Corporation Limited
|
SL74HCU04 SL74HCU04D SL74HCU04N |
Hex Unbuffered Inverters(High-Performance Silicon-Gate CMOS)
|
SLS[System Logic Semiconductor]
|
25HCU04A |
Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS
|
INTEGRAL JOINT STOCK COMPANY
|
MC74LVX126D |
Quad Bus Buffe With 5V−Tolerant Inputs LV/LV-A/LVX/H SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDSO14
|
ON Semiconductor
|
MC74HCU04A06 MC74HCU04AFEL MC74HCU04AFELG MC74HCU0 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS
|
ONSEMI[ON Semiconductor]
|
M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
M470L6524BTU0-CLCC M470L3324BTU0-CLB3 M470L6524BTU |
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die DDR SDRAM的缓冲模18 4针缓冲模块基12Mb乙芯
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
M374S6553BTS-C7A M366S2953BTS-C7A M366S3354BTS M36 |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费(符合RoHS
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|