| PART |
Description |
Maker |
| AD500-9 |
Avalanche Photodiode NIR
|
Silicon Sensor
|
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| SSO-AD-1900-TO5I SSO-AD-2500-TO5I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-800-TO5I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-500-TO52 |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
|
Fujitsu, Ltd.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| C30737P-500 C30737 C30737E-230 C30737E-500 C30737P |
From old datasheet system
Epitaxial Silicon Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| SD197-70-72-591 |
Cooled Large Area Red Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| C30916E |
Large Area Silicon Avalanche Photodiode for General-Purpose Applications
|
ETC[ETC]
|
| APD-1351-HF APD-1351-HFA APD-1350-HX APD-1351-VT A |
Mini-Size InGaAs Avalanche PHOTODIODE with Single-Mode Pigtail 迷你尺寸铟镓砷雪崩光电二极管与单模尾
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
