PART |
Description |
Maker |
ACY11 ACY14 ACY17 ACY18 ACY19 AC117 AC130 AC126 AC |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-1 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1.2A I(C) | TO-1 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | CAN TRANSISTOR | BJT | NPN | 15V V(BR)CEO | CAN TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | TO-1 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | CAN TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 15V的五(巴西)总裁| 500mA的一(c)| TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 200MA I(C) 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 200mA的我(丙
|
Electronic Theatre Controls, Inc. IDEC, Corp.
|
IRG4RC10U IRG4RC10UTR IRG4RC10UTRL IRG4RC10UTRR |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
ZXTAM322 ZXTAM322TA ZXTAM322TC |
MPPS Miniature Package Power Solutions 15V NPN LOW SATURATION TRANSISTOR From old datasheet system MPPS?? Miniature Package Power Solutions 15V NPN LOW SATURATION TRANSISTOR
|
ZETEX[Zetex Semiconductors]
|
ZXTN23015CFH ZXTN23015CFHTA |
15V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
ZXT11N15DF ZXT11N15DFTC ZXT11N15DFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 3000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN 15V NPN SILICON LOW SATURATION TRANSISTOR NPN Low Sat Transistor
|
Diodes, Inc. Diodes Incorporated Zetex Semiconductors
|
CD9018 CD9018E CD9018D CD9018F CD9018G CD9018I |
0.400W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.030A Ic, 40 - 59 hFE NPN SILICON PLANAR EPITAXIAL TRANSISTOR
|
Continental Device India Limited
|
IRG4PH50S |
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
|
IRF[International Rectifier]
|
DSS3515M-15 |
15V PNP LOW VCE(sat) TRANSISTOR
|
Diodes Incorporated
|
IRG4PC40S IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A) 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
IRGPF20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=5.3A)
|
IRF[International Rectifier]
|
IRGPC20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
|
IRF[International Rectifier]
|