PART |
Description |
Maker |
ML74WLAE |
NAND Gate (unbuffered) and OR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
74AHC1GU04 74AHC1GU04W5-7 74AHC1GU04SE 74AHC1GU04S |
UNBUFFERED SINGLE INVERTER GATE AHC/VHC/H/U/V SERIES, 1-INPUT INVERT GATE, PDSO5
|
Diodes Incorporated http://
|
74AUP2GU04 74AUP2GU04GF132 74AUP2GU04GM115 74AUP2G |
Low-power dual unbuffered inverter; Package: SOT891 (XSON6); Container: Tape reel smd AUP/ULP/V SERIES, DUAL 1-INPUT INVERT GATE, PDSO6 Low-power dual unbuffered inverter; Package: SOT886 (XSON6); Container: Tape reel smd AUP/ULP/V SERIES, DUAL 1-INPUT INVERT GATE, PDSO6 Low-power dual unbuffered inverter; Package: SOT363 (SC-88); Container: Tape reel smd, Reverse AUP/ULP/V SERIES, DUAL 1-INPUT INVERT GATE, PDSO6
|
NXP Semiconductors N.V.
|
MC74LCXU04DR2 |
Low-Voltage CMOS Unbuffered Hex Inverter With 5 V−Tolerant Inputs LVC/LCX/Z SERIES, HEX 1-INPUT INVERT GATE, PDSO14
|
ON Semiconductor
|
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC 64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
M378T6553CZ3-CCC M378T6553CZ3-CD5 M378T6553CZ3-CE6 |
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
MC14072B MC14075B MC14078B MC14068B MC14002B MC140 |
Quad 4-input NOR gate From old datasheet system 8-nput NOR Gate Dual 4-nput NOR Gate Triple 3-nput NOR Gate Quad 2-nput NOR Gate B-Suffix Series CMOS Gates 后缀系列CMOS 4000/14000/40000 SERIES, QUAD 2-INPUT OR GATE, CDIP14
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi Motorola, Inc. Motorola Mobility Holdings, Inc.
|
NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM 184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA ETC Electronic Theatre Controls, Inc.
|
HYMD532646A6-H HYMD532646A6-K HYMD532646A6-L HYMD5 |
DDR SDRAM - Unbuffered DIMM 256MB Unbuffered DDR SDRAM DIMM 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
HYMD264646B8-H HYMD264646B8-K HYMD264646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
HYMD132725B8J-J HYMD132725BL8J-J |
32Mx72|2.5V|J|x18|DDR SDRAM - Unbuffered DIMM 256MB Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|