| PART |
Description |
Maker |
| HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
|
Elpida Memory, Inc.
|
| HM5212325FBPC HM5212325FBPC-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| IBM13M64734CCA |
64M x 72 2-Bank Registered/Buffered SDRAM Module(64M x 72 2组寄缓冲同步动态RAM模块) 64米72 2，银行注缓冲内存模组4米72 2组寄缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| KM432S2030CT-G7 KM432S2030CT-F10 KM432S2030CT-G6 K |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM416S8030BN-G/FH KM416S8030BN-G/FL |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128MbSDRAM的收缩的TSOP 200万16 × 4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYS64V64220GU-75-C2 HYS72V64220GU-75-C2 HYS72V6422 |
3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank; End-of-Life
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank (ECC); End-of-Life
SDRAM Modules - 512MB PC133 (3-3-3) 2-bank (ECC); End-of-Life
SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.3400 x 64/72-Bit512MByte SDRAM内存模块168针脚无缓冲DIMM模块
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY
IR LED 880NM 40 DEG SIDE VIEW
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| HB52RF649E1U-75B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133 SDRAM
|
Elpida Memory
|
