| PART |
Description |
Maker |
| MB84VD23481FJ-70PBS |
64 M (6) FLASH MEMORY & 32 M (6) Mobile FCRAM
|
Spansion Inc.
|
| MB84VD23481FJ-70PBS MB84VD23481FJ-70 |
64 M (】16) FLASH MEMORY & 32 M (】16) Mobile FCRAM
|
SPANSION[SPANSION]
|
| MB81ES173225-15-X MB81ES171625-15-X E511408 MB81ES |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
From old datasheet system
Consumer FCRAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MB82DBS04154E-70L |
64 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| MB81ES171625-15WFKT-X MB81ES173225-15WFKT-X |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 单数据传输速率女的FCRAM消费/嵌入式SIP应用程序特定的内
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 1M X 16 SYNCHRONOUS DRAM, 12 ns, UUC84
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 512K X 32 SYNCHRONOUS DRAM, 12 ns, UUC84
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MB82DBS02163E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode
|
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| TC59LM814CFT-60 TC59LM806CFT-60 TC59LM806CFT-50 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
4,194,304-WORDSx4 BANKSx16-BITS Network FCRAM or 8,388,608-WORDSx4BANKSx8-BITS Network FCRAM
|
Toshiba Corporation
|
| MB81ES123245-10 |
128 M-BIT (4-BANK × 1 M-WORD × 32-BIT) SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
|
Fujitsu Component Limited.
|
| MB82DP04183C MB82DP04183C-65LWFKT MBR0520LT1G SN54 |
64M Bit (4 M word ??16 bit) Mobile Phone Application Specific Memory
64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory
Surface Mount Schottky Power Rectifier Plastic SOD?123 Package
18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS
|
Fujitsu Media Devices Limited
ONSEMI
TI
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MB82DP02183C-65L MB82DP02183C-65LPBT MB82DP02183C- |
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, UUC
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, PBGA71
32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
