| PART |
Description |
Maker |
| EIA1314-4P EIB1314-4P |
13.75-14.5GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1314A-4P |
13.0-14.5GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| MGFK37V4045_97 MGFK37V4045 MGFK37V404597 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V4045_03 MGFK35V4045 MGFK35V404503 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS44V273598 MGFS44V2735_98 MGFS44V2735 |
2.7-3.5GHz BAND 25W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A_04 MGFS45V2325A MGFS45V2325A04 |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider
5GHZ 10 Fixed Modulus Divider
5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| NJG1552F-L5 NJG1552F-L3 NJG1552F-L7 NJG1552F-C8 NJ |
1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
