PART |
Description |
Maker |
H57V1262GFR |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|
H57V1262GTR |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|
EM48AM1644VBA-6FE EM48AM1644VBA-75FE EM48AM1644VBA |
128Mb (2M×4Bank×16) Synchronous DRAM 128Mb (2M隆驴4Bank隆驴16) Synchronous DRAM 128Mb (2M】4Bank】16) Synchronous DRAM
|
http:// Eorex Corporation
|
HY57V641620ET-7 HY57V641620ESTP-H HY57V641620ET-H |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
EM488M1644VTC-75F EM488M1644VTC-7F EM488M1644VTCEV |
128Mb (2Mx4Bankx16) Synchronous DRAM
|
Eorex Corporation
|
EM488M1644LBA-10F EM48BM1644LBA-10FE EM48AM1644LBA |
128Mb (2M×4Bank×16) Synchronous DRAM 128Mb (2M】4Bank】16) Synchronous DRAM
|
Eorex Corporation
|
HY57V28820HCLT-8I HY57V28820HCLT-HI HY57V28820HCLT |
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 SDRAM - 128Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K |
128Mb SDRAM, 3.3V, LVTTL, 100MHz 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
IS42S16800E-6TLI IS42S16800E-6TLI-TR |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mb SYNCHRONOUS DRAM
|
INTEGRATED SILICON SOLUTION INC List of Unclassifed Man...
|
42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
HMD16M72D9A-13 HMD16M72D9A-F13 HMD16M72D9A-F12 HMD |
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础6Mx8BanksK的参考。,3.3 Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础16Mx8BanksK的参考。,3.3
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|