| PART |
Description |
Maker |
| M52D32321A-10BG |
512K x 32Bit x 2Banks Synchronous DRAM 1M X 32 SYNCHRONOUS DRAM, 8 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
| K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
CONNECTOR ACCESSORY
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M52S16161A-10BG M52S16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12S16161A-10T M12S16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12S16161A0707 M12S16161A-6TG M12S16161A-6BG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| T431616D T431616D-5C T431616D-5CG T431616D-5S T431 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| M12L16161A-6T M12L16161A-8T M12L16161A-5.5T M12L16 |
CONNECTOR ACCESSORY
512K x 16Bit x 2Banks Synchronous DRAM 12k × 16Bit的X 2Banks同步DRAM
|
Electronic Theatre Controls, Inc.
|
| HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY5 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1 |
1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
