| PART |
Description |
Maker |
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| SBL-804 SBL SBL-121 SBL-122 SBL-221 SBL-801 SBL-80 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
C to Millimeter Band Mixer/ Detector/ Modulator Applications
C to Millimeter Band Mixer, Detector, Modulator Applications C至毫米波段混频器，检测器，调制器的应
|
http://
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| AH445-70 AH491-70 AH490-00 AH491-71 AH618-00 AH370 |
10 GHz - 11 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
12 GHz - 13.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
16.5 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
46 GHz - 50 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
20 GHz - 22 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
18 GHz - 20 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
ATMEL CORP
|
| DGB9335 DGB9344 DGB9345 DGB8544 DGB8514 DGB8164 DG |
12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
18 GHz - 26.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
5 GHz - 8.2 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
40 GHz - 60 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
8.2 GHz - 12.4 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
SKYWORKS SOLUTIONS INC
|
| DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
| GS150TC25104 GS150TA25104 GS150TI25104 |
Gallium Arsenide Schottky Rectifier
4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS Corporation
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| GN01022 |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0183 |
Gallium Arsenide Devices
|
Panasonic
|
|
