| PART |
Description |
Maker |
| EPC-740-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.5-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-470-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| KIP-107-1 |
1.25G InGaAs PIN Photodiode Chip
|
KODENSHI KOREA CORP.
|
| KOM0622045 |
8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
| S5106 S5107 S7509 S7510 |
Si PIN photodiode Chip carrier package for surface mount
|
Hamamatsu Corporation
|
| C10439-01 C10439-02 C10439-03 |
Photodiode module Integrates a Si photodiode for precision photometry with low-noise amp
|
Hamamatsu Corporation
|
| S2592 |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
|
Hamamatsu Corporation
|
