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GTO2940-12RP - GTO Clamping Capacitors, Self-healing, Segmented

GTO2940-12RP_4580047.PDF Datasheet


 Full text search : GTO Clamping Capacitors, Self-healing, Segmented
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PART Description Maker
GTO2940-12RP GTO Clamping Capacitors, Self-healing, Segmented
Vishay Siliconix
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Agilent(Hewlett-Packard)
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TC514102AJ-60 TC514102AP TC514102AP-60 TC514102ASJ T-NPN- SI-LO-NOISE
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Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:20Vrms; Peak Surge Current (8/20uS), Itm:250A; Clamping Voltage 8/20us Max :70V; Peak Energy (10/1000uS):1.5J; Package/Case:Radial Leaded; Clamping Voltage Max, Vc:70V
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
CMPZ4615 CMPZ4616 CMPZ4614 CMPZ4617 CMPZ4618 350mW LOW NOISE ZENER DIODE 5% TOLERANCE
VARISTOR, 1206 18VDC 0.4JVARISTOR, 1206 18VDC 0.4J; Voltage, varistor at 1mA:25.5V; Voltage, clamping max:42V; Voltage, clamping 8/20us max:40V; Energy, transient 10/1000us max:0.4J; Current, peak 8/20us max:150A; Voltage rating,
Central Semiconductor Corp.
MBRF1045CT-G MBRF1030CT-G MBRF1060CT-G MBRF10100CT Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=30V, V<sub>R</sub>=30V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=10A
Comchip Technology
HGTP20N36G3VL HGT1S20N36G3VLS HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs 37.7 A, 355 V, N-CHANNEL IGBT, TO-262AA
20A 360V N-Channel Logic Level Voltage Clamping IGBTs
N/A
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
SM8S20A SM8S26A SM8S22A SM8S36A Excellent clamping capability
Shanghai Semitech Semic...
320PJT200A THYRISTOR|GTO|2KV V(DRM)|TO-200VAR82W 晶闸管| GTO的| 2kV的五(DRM)的|00VAR82W
PanJit International, Inc.
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Fairchild Semiconductor, Corp.
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SIEMENS AG
 
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