| PART |
Description |
Maker |
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| AS6C4008-55STIN AS6C4008-55PCN AS6C4008-55SIN AS6C |
512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| LY62L5128SL-55LLE LY62L5128RL-55LLE |
512K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS62LV4006SCP55 BS62LV4006STC55 BS62LV4006HIG55 BS |
Very Low Power CMOS SRAM 512K X 8 bit
|
Brilliance Semiconducto...
http://
Brilliance Semiconductor
|
| BS616LV8017ECG55 BS616LV8017FIP55 BS616LV8017FIG55 |
Very Low Power CMOS SRAM 512K X 16 bit
|
Brilliance Semiconducto...
|
| LY62L5128RL LY62L5128 LY62L5128E LY62L5128GL LY62L |
512K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L51316LL-55LLI LY62L51316LL-55LLIT |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS616LV8016FIP55 BS616LV8016FIP70 BS616LV8016DIG55 |
Very Low Power CMOS SRAM 512K X 16 bit
|
Brilliance Semiconducto...
|
| EM681FV16A |
512K x 16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
