| PART |
Description |
Maker |
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| LD7213L LD7213 |
14 GHz / 300 W CW / CONDUCTION COOLING / HIGH POWER GAIN / FLAT GAIN VARIATION
14 GHz, 300 W CW, CONDUCTION COOLING, HIGH POWER GAIN, FLAT GAIN VARIATION
|
NEC Corp.
NEC[NEC]
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SST12LF09-Q3CE |
2.4 GHz High-Gain, High-Efficiency Front-end Module
|
Microchip Technology
|
| AMMP-5620 |
6 - 20 GHz High Gain Amplife
|
AVAGO TECHNOLOGIES
|
| RFMA7090-0.5W-Q7 |
7.0 - 9.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA0912-0.5W-Q7 |
9.5 - 11.7 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA0912-1W-Q7 |
9.50 - 11.70 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
|
| AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
AD[Analog Devices]
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| LD7261 |
20 GHz / 250 W CW / PPM FOCUSING / HIGH POWER GAIN
20 GHz, 250 W CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC Corp.
NEC[NEC]
|
