PART |
Description |
Maker |
IDT70T3319S133BF IDT70T3319S133BC IDT70T3319S133DD |
JFET-Input Operational Amplifier 8-SOIC 0 to 70 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高.5V12/256/128K X 18 SYNCHRONOU S双,端口静态与3.3V.5V的内存界 JFET-Input Operational Amplifier 8-TSSOP 0 to 70 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 JFET-Input Operational Amplifier 8-SO 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA208
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Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
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Integrated Device Techn... Integrated Device Technology, Inc. IDT
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K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22 HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
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Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
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P93U422-35FMB P93U422-35PMB P93U422-35SMB |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
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Pyramid Semiconductor, Corp. Microchip Technology, Inc.
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IS62C1024-35Q IS62C1024-35QI IS62C1024 16_62C1024 |
70ns; 5V; 128K x 8 high-speed CMOS static RAM Micro LED; LED Color:Red Orange; Luminous Intensity:80ucd; Viewing Angle:140 ; Forward Voltage:2.2V; Color:Red/Orange; Package/Case:1210; Reel Quantity:3000; Wavelength:630nm RoHS Compliant: Yes 128K的8高速CMOS静态RAM 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM From old datasheet system ASYNCHRONOUS STATIC RAM 128K x 8 HIGH-SPEED CMOS STATIC RAM
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Advanced Interconnections, Corp. SIEMENS AG Integrated Silicon Solution, Inc. ICSI[Integrated Circuit Solution Inc] Integrated Circuit Solu...
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W24010A |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM)的
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Winbond Electronics, Corp.
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W24010AC |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM)的
|
Winbond Electronics, Corp.
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AS7C1024B AS7C1024BV1.2 AS7C1024B-20TJIN AS7C1024B |
From old datasheet system SRAM - 5V Fast Asynchronous High Speed CMOS Logic Hex Inverters 14-SOIC -55 to 125 High Speed CMOS Logic Quad 2-Input NAND Gates with Open Drain 14-PDIP -55 to 125 High Speed CMOS Logic Quad 2-Input NOR Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 15 ns, PDSO32 5V 128K X 8 CMOS SRAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32 5V 128K X 8 CMOS SRAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32 High Speed CMOS Logic Quad 2-Input NAND Gates with Open Drain 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Quad 2-Input NOR Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32 High Speed CMOS Logic Quad 2-Input NOR Gates 14-PDIP -55 to 125
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ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
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CXK77B3641GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位)
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Sony, Corp.
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W241024A W241024AJ- W241024AI-12 W241024AQ-20 W241 |
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32 From old datasheet system 128*8HIGH SPEED COMOS STATIC RAM
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Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
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