| PART |
Description |
Maker |
| SI9933BDY-T1-E3 |
3600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| FDMA6023PZT |
-20V Dual P-Channel PowerTrench® MOSFET; 6-MicroFET 3600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
| ZXMC4559DN8NBSP ZXMC4559DN8TC ZXMC4559DN8 ZXMC4559 |
TIP REPLACEMENT .125 700 DEG 3600 mA, 60 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| CP20420PQFP160A-0I CP20420PQFP160B-1I CP20840PQFP1 |
FPGA, 896 CLBS, 3600 GATES, PQFP160 PLASTIC, QFP-160
FPGA, 1685 CLBS, 7100 GATES, PQFP160 PLASTIC, QFP-160
FPGA, 474 CLBS, 1900 GATES, PQCC84
FPGA, 896 CLBS, 3600 GATES, PQCC84
FPGA, 896 CLBS, 3600 GATES, CPGA155
|
|
| SM3436-40 |
3400-3600 MHz 10 Watt Ultra Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| ZGDC6-362HP |
380 MHz - 3600 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.6 dB INSERTION LOSS-MAX ROHS COMPLIANT, CASE HT1398, 4 PIN
|
Mini-Circuits
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| SKNA202 SKNA202_36 SKNA202_40 SKNA202_42 SKNA202_4 |
Avalanche Diode 200 A, 4600 V, SILICON, RECTIFIER DIODE
Avalanche Diode 200 A, 3600 V, SILICON, RECTIFIER DIODE
|
Semikron International
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
|
