| PART |
Description |
Maker |
| MT49H8M32 MT49H8M32FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
| HYB18RL25632AC HYB18RL25616AC |
256 Mbit DDR Reduced Latency DRAM
|
INFINEON[Infineon Technologies AG]
|
| SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| LTC2408 LTC2404 |
4-/8-Channel 24-Bit PowerNo Latency Delta-SigmaADC
4-/8-Channel 24-Bit µPowerNo Latency Delta-Sigma™ ADC
4-Ch, 4ppm INL, 1.5uV Noise, No Latency Delta Sigma
8-Ch, 4ppm INL, 1.5uV Noise, No Latency Delta Sigma
|
Linear Technology
|
| IS49RL36160 |
576Mb: x18, x36 RLDRAM 3 Features
|
Integrated Silicon Solution, Inc
|
| SI4392DY SI4392DY06 |
N-Channel Reduced Qg, Fast Switching WFET?
N-Channel Reduced Qg, Fast Switching WFET庐
N-Channel Reduced Qg, Fast Switching WFET㈢
|
Vishay Siliconix
|
| DVJR2225-LF DVJR1.050-LF DVJR4.735-LF DVJR4.750-LF |
SURFACE MOUNT ELECTROLYTIC 105C REDUCED SIZE DVJR
ELECTROLYTIC 105°C REDUCED SIZE
|
Dubilier
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| LTC2436-1CGN LTC2436-1IGN LTC2436-1 LTC2436-1-15 |
2-Channel Differential Input 16-Bit No Latency ADC
2-Channel Differential Input 16-Bit No Latency DS ADC 2-CH 16-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO16
2-Channel Differential Input 16-Bit No Latency DS ADC
|
Linear Technology Corporation
Linear Technology, Corp.
|
| T81L0003A-BK T81L0003A T81L0003A-AD T81L0003A-AK T |
Reduced I/O 8-bit MCU
|
TMT[Taiwan Memory Technology]
|
| CY7C1561V18-333BZC CY7C1561V18-333BZI CY7C1563V18 |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
