PART |
Description |
Maker |
CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
MR27V452D |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|
MR27V3255D |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 8-Double Word x 32-Bit or 16-Word x 16-Bit Page Mode One Time PROM
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
MSM27C3202CZ |
2097152-Word x 16-Bit or 4194304-Word x 8-Bit One Time PROM 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM 2097152字16位或4194304字8位一次性可编程
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
PD44324185BF5-E33-FQ1-A PD44324185BF5-E40-FQ1-A PD |
36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
MC-45D16CD641KS MC-45D16CD641KS-C75 MC-45D16CD641K |
16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
PD46364185BF1-E40-EQ1 PD46364365BF1-E40-EQ1 PD4636 |
36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
MSM27C802CZ |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM 524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM
|
OKI electronic components OKI[OKI electronic componets]
|
UPD23C16000BLGY-XXX-MJH UPD23C16000BLGY-XXX-MKH UP |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) 1,600位掩膜可编程ROM00万字位(字节模式 100万字6位(字模式)
|
NEC, Corp. NEC Corp.
|