| PART |
Description |
Maker |
| MCP2510-/P MCP2510-/SO MCP2510-/ST MCP2510T-/SO MC |
Stand-Alone CAN Controller with SPIInterface
Stand-Alone CAN Controller with SPI Interface
Stand-Alone CAN Controller with SPI?/a> Interface
1 CHANNEL(S), 1M bps, LOCAL AREA NETWORK CONTROLLER, PDSO18 0.300 INCH, PLASTIC, SOIC-18
1 CHANNEL(S), 1M bps, LOCAL AREA NETWORK CONTROLLER, PDSO20
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| ENC424J600-I ENC424J600T-IML ENC424J600T-IPT ENC42 |
Stand-Alone 10/100 Ethernet Controller with SPI or Parallel Interface
|
Microchip Technology
|
| PSMN039-100YS |
N-channel LFPAK 100 V 39.5 m惟 standard level MOSFET
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
N-channel LFPAK 100 V 39.5 m standard level MOSFET 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| SI4482DY SI4482DY-T1 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
N-Channel 100-V (D-S) MOSFET
N-Channel, 100-V Single
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| 2SJ289JFTD 2SJ189-TL 2SK1839JJTL |
0.5 A, 100 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET PCP, SC-62, 3 PIN
4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
DOMINANT Opto Technologies Sdn. Bhd.
|
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 30KPA90CA OKPA170CA OKPA180CA OKPA198CA OKPA216CA |
STAND-OFF VOLTAGE-30 TO 288 Volts 30000 Watt Peak Pulse Power
Diode TVS Single Bi-Dir 180V 30KW 2-Pin Case P600 T/R
STAND-OFF VOLTAGE-30 TO 288 Volts 30000 Watt Peak Pulse Power
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
New Jersey Semiconductors
|
| MTP10N10EL MTP10N10ELG |
Power MOSFET 10 Amps, 100 Volts, Logic Level; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220
|
ON Semiconductor
|
| SUM34N10-35 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SUD40N10-25 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175`C MOSFET
|
VISAY[Vishay Siliconix]
|
|
