PART |
Description |
Maker |
GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
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GSI Technology, Inc.
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IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水 TV 6C 6#12 SKT WALL RECP Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
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IDT Integrated Device Technology, Inc.
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GS8320ZV36T-200 GS8320ZV36T-133 GS8320ZV36T-133I G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 6.5 ns, PQFP100 1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
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GSI Technology, Inc. http://
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MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5V I/O28K x 32,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT SRAM的电压(2.5V输入/输出Mb的流通式同步静态存储器
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Micron Technology, Inc.
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CY7C1470V25 CY7C1470V25-167ACES CY7C1470V25-167AXC |
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PQFP100 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 1M X 72 ZBT SRAM, 3 ns, PBGA209 ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
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Cypress Semiconductor Corp. SRAM Cypress Semiconductor, Corp.
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MCM64Z916ZP100R MCM64Z834ZP100R |
512K X 18 ZBT SRAM, 5 ns, PBGA119 256K X 36 ZBT SRAM, 5 ns, PBGA119
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MOTOROLA INC
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AS7C25512NTF32_36A AS7C25512NTF36A-10TQC AS7C25512 |
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 8.5 ns, PQFP100 2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 7.5 ns, PQFP100 2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 51Vz 5mA-Izt 0.05 5uA-Ir 38.8Vr DO41-GLASS 5K/AMMO DIODE, ZENER, 24V, 5%, 1W& DIODE ZENER SINGLE 1000mW 33Vz 7.5mA-Izt 0.05 5uA-Ir 25.1Vr DO41-GLASS 5K/REEL NTD? Sync SRAM - 2.5V
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Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
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IDT71V3557S75PF IDT71V3557S85PF IDT71V3557S80PF ID |
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K的3656 × 18.3V的同步ZBT SRAM.3V的I / O的脉冲计数器,流量,通过输出 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
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Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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GS881Z32BD-200IV GS881Z36BD-200IV GS881Z18BD-200IV |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 32 ZBT SRAM, 6.5 ns, PBGA165 9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 32 ZBT SRAM, 5.5 ns, PQFP100
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GSI Technology, Inc.
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CY7C1371C-117BGI CY7C1371C-117BZC CY7C1371C-117BGC |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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IS61NP25618-133B2 IS61NP25618-133B2I IS61NP25618-1 |
256K X 18 ZBT SRAM, 4.2 ns, PBGA119 PLASTIC, BGA-119 256K X 18 ZBT SRAM, 3.8 ns, PBGA119 PLASTIC, BGA-119 256K X 18 ZBT SRAM, 5 ns, PQFP100
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Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
CY7C1372DV25-250BGC CY7C1370DV25-200AXI CY7C1372DV |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 1M X 18 ZBT SRAM, 3.4 ns, PQFP100 512K X 36 ZBT SRAM, 3 ns, PBGA119
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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