| PART |
Description |
Maker |
| PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http://
INFINEON[Infineon Technologies AG]
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| BLF6G22-180PN BLF6G22LS-180PN NXPSEMICONDUCTORSN.V |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
Power LDMOS transistor BLF6G22LS-180PN<SOT539B (CDFM4)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;BLF6G22LS-180PN<SOT539B (CDFM4)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- |
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty
LDMOS Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| AFT20P060-4N |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
| BLF8G10LS-270GV BLF8G10LS-270V |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF2425M9L30-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
