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IDT71P72804 - 1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165

IDT71P72804_4719685.PDF Datasheet

Part No.

IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72604S200BQ IDT71P72604S250BQ IDT71P72204S200BQ IDT71P72804S250BQ IDT71P72204S250BQ IDT71P72804S167BQ IDT71P72104S167BQ IDT71P72804S200BQ IDT71P72204S167BQ IDT71P72104S250BQ IDT71P72104S200BQ IDT71P72604S167BQG

Description

1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165

File Size

592.35K / 22 Page

Maker

IDT
http://
Integrated Device Technology, Inc.

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: IDT71P72804S167BQ

Maker: IDT, Integrated Device Technology Inc

Pack: ETC

Stock: Reserved

Unit price for :

50: $0.00

100: $0.00

1000: $0.00

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http://www.idt.com/

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Full text search : 1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165

Related Part Number

PART	Description	Maker
IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25	1.8V 512K x 36 QDR II PipeLined SRAM 1.8V 2M x 9 QDR II PipeLined SRAM 1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 2M x 8 QDR II Pipelined SRAM 18Mb Pipelined QDR II SRAM Burst of 4	IDT http://
CY7C1303AV18-167BZC CY7C1306AV18-167BZC CY7C1303AV	18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR垄芒 Architecture	Cypress Semiconductor
IDT71P74804 IDT71P74804S167BQ IDT71P74804S200BQ ID	18Mb Pipelined QDR II SRAM Burst of 4	Integrated Device Technology
CY7C1304DV25-100BZXC	9-Mbit Burst of 4 Pipelined SRAM with QDR(TM) Architecture	Cypress
CY7C1307AV18-167BZC CY7C1307AV18 CY7C1307AV18-100B	18-Mb Burst of 4 Pipelined SRAM with QDR垄芒 Architecture 18-Mb Burst of 4 Pipelined SRAM with QDR Architecture	Cypress Semiconductor
CY7C1305BV25 CY7C1305BV25-100BZC CY7C1305BV25-167B	18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture From old datasheet system	CYPRESS[Cypress Semiconductor]
CY7C1305AV25 CY7C1305AV25-133BZC CY7C1305AV25-167	18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture 18-MBIT BURST OF 4 PIPELINED SRAM WITH QDR ARCHITECTURE	CYPRESS[Cypress Semiconductor]
CY7C1425AV18 CY7C1414AV18-167BZI CY7C1414AV18-167B	36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mb QDR-II SRAM2-Word Burst结构36-Mb QDR-II SRAM2-Word Burst结构 36 - MB的QDR - II型的SRAM2字突发结构）6 - MB的QDR - II型的SRAM2字突发结构）	Cypress Semiconductor Corp.
CY7C1525V18-200BZC CY7C1525V18-250BZC CY7C1514V18	72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 72兆位QDR - II型⑩SRAM2字突发结	Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2	512K x 36 pipelined SRAM, 167MHz 512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 512K x 36 pipelined SRAM, 225MHz	Cypress Semiconductor, Corp.
CY7C142XAV18 CY7C130XBV25 CY7C132XBV25	(CY7C1xxxxVxx) RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata	Cypress Semiconductor
K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884	2Mx36 & 4Mx18 QDR II b4 SRAM 4M X 18 QDR SRAM, 0.45 ns, PBGA165	Samsung semiconductor

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