| PART |
Description |
Maker |
| APT50GS60BRDQ2 APT50GS60BRDQ2G APT50GS60SRDQ2 APT5 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT30GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 58A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT60GT60BR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 116A
|
ADPOW[Advanced Power Technology]
|
| SGB15N60HS06 |
High Speed IGBT in NPT-technology
|
Infineon Technologies AG
|
| STGW45HF60WD |
ultra fast IGB
|
ST Microelectronics
|
| SGP30N60HS SGP30N60HS09 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SIGC42T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling
|
Infineon Technologies AG
|
| PS2832 PS2832-1 PS2832-1-F3 PS2832-1-F4 PS2832-1-V |
CONN CABLE ADPT PG 21/NPT 3/4,1 高隔离电压高集电极到发射极电压专科多光耦合
HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI OPTOCOUPLER 高隔离电压高集电极到发射极电压专科多光耦合
CONN CABLE ADPT PG 13.5/NPT 1/2,1
CONN CABLE ADPT PG 16/NPT 1/2,1
Power Resistor; Series:MK; Resistance:1kohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
| AD1376JD AD1376KD AD1377 AD1377JD AD1377KD AD1316 |
Complete High Speed 16-Bit A/D Converter
Complete, High Speed 16-Bit A/D Converter 1-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP32
Pressure Transducer, Series 19 mm, Compensated, Pressure Range: 0 psi to 10 psi, Gage, 1/8-27 NPT, 10 Vdc excitation 1-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP32
|
http://
AD[Analog Devices]
Analog Devices, Inc.
|
