PART |
Description |
Maker |
M29DW128F_06 M29DW128F M29DW128F60NF1 M29DW128F60N |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M29DW128F M29DW128F60NF1 M29DW128F60NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位16Mb的x8或和8Mb x16插槽,多行,页,引导块)3V电源,快闪记忆体 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位6Mb的x8或和8Mb x16插槽,多行,页,引导块)3V电源,快闪记忆体
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
M69KB128AA |
128 Mbit (8Mb x16) 1.8V Supply Burst PSRAM
|
STMicroelectronics
|
M58WR128ET M58WR128EB |
128 MBIT (8MB X 16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M30L0R7000XX M30L0R7000B0 M30L0R7000B0ZAQ M30L0R70 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
M58LR128GT85ZB5 M58LR128GB M58LR128GB85ZB5 M58LR12 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|
M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB7 |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
|
STMicroelectronics
|
M58LW064D110N6P |
64 MBIT(8MB X8, 4MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|