| PART |
Description |
Maker |
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| FMC5 FMG9 FMJ1 FMQ1 |
P-Channel NexFET™ Power MOSFET 6-DSBGA -55 to 150
N-Channel NexFET™ Power MOSFET 8-SON -55 to 150
TRANSISTOR | 20V V(BR)CEO | 30MA I(C) | SOT-25
Digital Media Processor 529-FCBGA 0 to 90 晶体管| 50V五（巴西）总裁| 100mA的一（c）|采用SOT - 25
|
飞思卡尔半导体(中国)有限公司
|
| FDA79N15NL |
150V N-Channel MOSFET 79 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| APTM50AM24SCG |
150 A, 500 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Series & SiC parallel diodes MOSFET Power Module
|
Microsemi Corporation
|
| PPFL3803M |
N Channel MOSFET; Package: TO-254; ID (A): 35; RDS(on) (Ohms): 0.0095; PD (W): 150; BVDSS (V): 30; Rq: 0.83; 35 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| 2SK3591-01MR 2SK3591 |
N-CHANNEL SILICON POWER MOSFET 40 A, 150 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| AP13P15GJ-HF AP13P15GH-HF |
13 A, 150 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
13 A, 150 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Lower On-resistance, Simple Drive Requirement
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
|
| VRF150 VRF15010 VRF150MP |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| IXTT120N15P IXTQ120N15P |
120 A, 150 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
N-Channel Enhancement Mode
|
IXYS CORP
IXYS Corporation
|
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
|
