PART |
Description |
Maker |
CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
CGD982HCI |
1 GHz, 22 dB gain GaAs high output power doubler CGD982HCI<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
CGY1043 |
1 GHz - 23 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
CGD1042L |
1 GHz, 23 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications 17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN 17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
HMC31307 313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
美国讯泰微波有限公司上海代表
|
HMC626ALP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 1 GHz
|
Hittite Microwave Corpo...
|
LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫,600 W/700 W连续,分之为重点,高功率增益 6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN 6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp. NEC[NEC]
|