| PART |
Description |
Maker |
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| CGD982HCI |
1 GHz, 22 dB gain GaAs high output power doubler CGD982HCI<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| TGA3503-SM-15 |
2-30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| HMC694 |
GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz
|
Hittite Microwave Corporation
|
| CGD1042L |
1 GHz, 23 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
| HMC694LP4 |
GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz
|
Hittite Microwave Corporation
|
| CGD985LC |
1 GHz, 25 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
| CGY1041 |
1 GHz, 21 dB gain GaAs push-pull amplifier CGY1041<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST
PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
