| PART |
Description |
Maker |
| MGFC38V5867 |
5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EID1112A1-5 |
11.70-12.70 GHz 5-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC4853-25 |
4.8-5.30 GHz 25-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1112A1-8 |
11.70-12.70 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC5972-12 |
5.90-7.20 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1616A1-12 |
16.0-16.5 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1010A-20 |
10.00-10.25 GHz 20-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1314A1-5 |
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC8596-12 EIC8596-12NH |
8.50-9.60 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
http://
|
| EIC1213-12 |
12.75-13.25 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
