| PART |
Description |
Maker |
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| 2SD2248 E001170 |
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS FOR INDUCTIVE LOAD DRIVE
From old datasheet system
|
Toshiba
|
| 2SK296802 2SK2968 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive Applications
DC−DC Converter, Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
| RP1053-2 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| RO2053A-1 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| SR5409 |
310.00 MHz One Port SAW Resonator
|
Vanlong Technology Co., Ltd.
|
| PXA300 PXA310 |
Storage Solution for Marvell’s PXA300/310 Platform
|
Actel Corporation
|
| NX5330SA NX5330SA-AZ |
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
|
California Eastern Labs
|
| NX8346TB-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs
|
| 2N7002PT115 2N7002PT |
60 V, 310 mA N-channel Trench MOSFET
Logic-level compatible
|
NXP Semiconductors N.V.
|
| NX5322EH NX5322EK NX5322 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX5321EH NX5321EK NX5321 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
NEC
|
|
