PART |
Description |
Maker |
E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E100 |
Yellow, mini LED. Lens translucent. Luminous intensity at 10mA: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max). Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max). Super bright green, mini LED. Lens translucent. Luminous intensity at 10mA: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max). Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max). Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max). T-1 bright white LED / Lens clear Miniature LEDs 微型发光二极 Orange, mini LED. Lens translucent. Luminous intensity at 10mA: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max). Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max). High efficiency red, mini LED. Lens translucent. Luminous intensity at 10mA: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max). Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10mA: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max). Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
|
Gilway Technical Lamp International Light Technologies Inc. International Light Technologies, Inc.
|
AIDL9 AIDL45 AIDL5J SIDM17 SIDM13 HCMDL20 ACMDL20G |
Logic IC 10-Bit, 125Msps Low Noise 3V ADCs; Package: QFN; No of Pins: 32; Temperature Range: 0°C to 70°C Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max ±12); I_D Q1, max (mA): (max 500) Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max /-10); I_D Q1, max (mA): (max 100) Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; Comments Frequency Switching Power Transistor; Application Scope: switching; Part Number: 2SA1736; H_FE: (min 120 @V_CE=2V, I_C=0.1A) (max 400 @V_CE=2V, I_C=0.1A) Junction FETs (Single); Surface Mount Type: Y; Package: VESM2; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 0.08) (max 0.48); I_DSS, max (mA): (min 1.4); |Yfs|, min (mS): (max -20) High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MOLD; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor; Application Scope: power amplification; Part Number: 2SA1241 逻辑IC Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max 400) 逻辑IC High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA966 逻辑IC Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 5) (max 30); I_DSS, max (mA): (min 25); |Yfs|, min (mS): (max -40) 逻辑IC Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: Low-noise; I_DSS, min (mA): (min 0.3) (max 6.5); I_DSS, max (mA): (min 1.2); |Yfs|, min (mS): (max -50)
|
Bourns, Inc. ANADIGICS, Inc. ITT, Corp.
|
HM628512ALRRI-7 HM628512ALPI-8 HM628512ALRRI-8 HM6 |
Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V; 524288-word x 8-bit High Speed CMOS Static RAM 524288字8位高速CMOS静态RAM
|
Hitachi,Ltd.
|
16M0WC 16M0WS 16M0X 16M0XC 16M0XS 16M0 16M0B 16M0B |
60V 300mA MONOLITHIC DIODE ARRAY 6 PIN MINI DIN CABLE MF 3 FT 6 PIN MINI DIN CABLE MF 10 FT APPLE IIC CABLE TO IWRTR MODEM 6 PIN MINI DIN CABLE MF 2FT PC SERIAL MODEM CBL 50 FT 6 PIN MINI DIN FF 10-FT 6 PIN MINI DIN CABLE MM 2FT 6 PIN MINI DIN FF 6 MINI DIN 8, MALE-MALE 15 FT. 6 PIN MINI DIN CABLE MM 3FT 6 PIN MINI DIN CABLE MM 10 FT 6 PIN MINI DIN CABLE FF 2FT KEYBD.EXT. MINI DIN 4 MM 10 FT KEYBD.EXT. MINI DIN 4 MM 6 FT 6 PIN MINI DIN CABLE FF 3 FT MINI DIN 8, MALE-MALE 10 FT. Connector assemblies, Keyboard Computer cables; 6 PIN MINI DIN CABLE MF 10 FT 0.3 A, 16 ELEMENT, SILICON, SIGNAL DIODE 6 PIN MINI DIN CABLE MF 3 FT 0.3 A, 16 ELEMENT, SILICON, SIGNAL DIODE 6 PIN MINI DIN CABLE MM 3FT 0.3 A, 16 ELEMENT, SILICON, SIGNAL DIODE
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp. MICROSEMI CORP-LOWELL
|
PDIP-40 |
A : MIN 3.300 MAX 4.200 B : MIN 0.018 MAX 0.570
|
Analog Microelectronics
|
P2681A-08TT P2681A P2681A-08SR P2681A-08ST P2681A- |
ICs for Inductive Proximity Switches; Package: S--0; VCC (min): 3.1 V; VCC (max): 40.0 V; ICC (max): 0.84 mA; IQ (max): 60.0 mA; Operating Temperature (min): -40.0 degC; General Purpose EMI Reduction IC
|
ALSC[Alliance Semiconductor Corporation]
|
P586-006-VGA-V2 |
Mini DisplayPort 1.2 to VGA Active Adapter Cable, Mini DP to HD15 (M/M), 1920x1200/1080p, 6 ft.
|
Tripp Lite. All Rights ...
|
N83810M |
10Gb Duplex Multimode 50-125 OM3 LSZH Fiber Patch Cable (Mini-LC - Mini-LC) - Aqua, 10M (33-ft)
|
Tripp Lite. All Rights ...
|
U028006 |
USB 2.0 Hi-Speed A to Mini-B Cable (A to 4Pin Mini-B, M-M), 6-ft
|
Tripp Lite. All Rights ...
|
2PC4081S135 |
NPN general-purpose transistor - Complement: 2PA1576S ; fT min: 100 MHz; hFE max: 560 ; hFE min: 270 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd From old datasheet system
|
NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
|
RM1A48A50 RM1A60A75 RM1A48A75 RM1A40A75 RM1A23D25 |
Solid-State Panel Mount Relay; Contacts:SPST; Output Device:Thyristor; Output Voltage Max:265VAC; Output Voltage Min:24VAC; Control Voltage Max:32VDC; Control Voltage Min:3VDC; Load Current Max:25A; Switching:Zero Cross
|
Carlo Gavazzi
|
|