PART |
Description |
Maker |
K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
HM62256BLFP10 HM62256BLFP8 HM62256BLFP-4SLT |
32768-word x 8-bit high speed CMOS static RAM, 45ns IC-SM-256K CMOS SRAM
|
Hitachi Semiconductor
|
AT29C020 AT29C020-10 AT29C020-10JC AT29C020-10JI A |
High Speed CMOS Logic Octal Inverting Transparent Latches with 3-State Outputs 20-PDIP -55 to 125 High Speed CMOS Logic Octal Positive-Edge-Triggered Inverting D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 FLASH 5V PROM, 120 ns, PDSO32 High Speed CMOS Logic Octal Non-Inverting Buffers and Line Drivers with 3-State Outputs 20-TSSOP -55 to 125 256K X 8 FLASH 5V PROM, 100 ns, PDIP32 High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-PDIP -55 to 125 256K X 8 FLASH 5V PROM, 150 ns, PDIP32 High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125 256K X 8 FLASH 5V PROM, 150 ns, PDSO32 2-Megabit 256K x 8 5-volt Only CMOS Flash Memory
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
LY61L25616AML-10I LY61L25616AML-10T LY61L25616AML- |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
AT27BV020-90VI AT27BV020-90VC AT27BV020-90TI AT27B |
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PDSO32 High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-PDIP -55 to 125 256K X 8 OTPROM, 90 ns, PQCC32 High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PBGA42 High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32 2-Megabit 256K x 8 Unregulated Battery-Voltage High Speed OTP EPROM
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
P4C1041-10JC P4C1041-10JI P4C1041-10TC P4C1041-10T |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Pyramid Semiconductor C... Pyramid Semiconductor, Corp. Pyramid Semiconductor Corporation
|
HY62SF16404E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62UF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静态RAM.0V操作) 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静RAM.0V操作)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|