| PART |
Description |
Maker |
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
| 2SD1223 E001101 |
NPN EPITAXIAL TYPE (SWITCHING/ HAMMER DRIVE/ PULSE MOTOR DRIVE/ POWER AMPLIFIER APPLICATIONS)
SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPUCATIONS
NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| 2SB907 E000655 |
TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SD1222 |
NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| SA03 |
Pulse Width Modulation Amplifier
|
Cirrus Logic
|
| SA01 |
PULSE WIDTH MODULATION AMPLIFIER
|
Cirrus Logic
|
| SA03 |
PULSE WIDTH MODULATION AMPLIFIER
|
Apex Microtechnology Corporation
|
| SA03_06 |
PULSE WIDTH MODULATION AMPLIFIER
|
APEX[Apex Microtechnology]
|
| 2SB907 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
|
TOSHIBA
|
| SA305 SA30507 |
PULSE WIDTH MODULATION AMPLIFIER
PULSE WIDTH MODULATION AMPLIFIER
|
Cirrus Logic
|
