PART |
Description |
Maker |
2412AT |
Direct Wire Photoelectronic with Fixed Heat Smoke Detectors
|
Systemsensor advanced ideas.
|
2400T 2400 |
Photoelectronic Detector
|
Gamewell-FCI by Honeywell
|
RA-400 PAM-1 |
Photoelectronic Detector
|
Gamewell-FCI by Honeywell Gamewell-FCI by Honeywe...
|
2151 RA-400Z PAM-1 |
Photoelectronic detector
|
Gamewell-FCI by Honeywell
|
2124TS |
Photoelectronic Smoke Detectors
|
Systemsensor advanced i...
|
A77-727-01 |
Direct-Wire Smoke Detector with Built-in Relay and Horn
|
Systemsensor advanced ideas.
|
ASD-PTL2F ASD-PL2F |
Analog, addressable photoelectronic smoke sensor
|
Gamewell-FCI by Honeywell
|
TD7627FN01 TD7627FN |
3-WIRE AND I2C BUS SYSTEM, 2.7 GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR CATV
|
Toshiba Semiconductor
|
TD7624AFN |
3-WIRE AND I2C BUS SYSTEM/ 1.3GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR TV AND CATV
|
Toshiba
|
K4R441869A-NM K4R441869A-MCK8 K4R441869A-NCK7 |
8M X 18 DIRECT RAMBUS DRAM, 45 ns, PBGA62 K4R271669A-N(M):Direct RDRAMData Sheet
|
Samsung Electronic
|
0916274001 91627-4001 SD-91627-001 |
5.00mm (.197") Pitch Appli-Mate RAST Power IDT Housing, Direct/Indirect, Female, 6 Circuits, Glow Wire Compatible 5.00mm (.197) Pitch Appli-Mate RAST Power IDT Housing, Direct/Indirect, Female, 6 Circuits, Glow Wire Compatible
|
Molex Electronics Ltd.
|
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|