| PART |
Description |
Maker |
| MT48H16M16LF MT48H8M32LF MT48H16M16LFB5-8ITG MT48H |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology, Inc.
http://
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| M463S1724DN1 |
16Mx64 SDRAM mSODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synch. DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| 48SD3208 48SD3208RPFH 48SD3208RPFK 48SD3208RPFE 48 |
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| 97SD3240 97SD324006 |
1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
|
Maxwell Technologies
|
| AS4SD4M16DG-8_IT AS4SD4M16DG-8_XT AS4SD4M16DG-10_I |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| 72SD3232RPFK 72SD3232 72SD3232RPFE 72SD3232RPFH 72 |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| HB52RF1289E2 HB52RF1289E2-75B |
1 GB Registered SDRAM DIMM 128-Mword ?72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M ?4 Components) PC133 SDRAM
128-Mword x 72-bit; 133MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM
|
Elpida Memory
|
| 97SD3232RPME 97SD3232RPMI 97SD3232RPMH 97SD3232RPM |
1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, QFP132
|
Maxwell Technologies, Inc
|
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
