PART |
Description |
Maker |
SKB06N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
APT20GN60B APT20GN60BG APT20GN60S APT20GN60SG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
APT30GS60KR APT30GS60KRG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
APT20GS60SRDQ1 APT20GS60SRDQ1G APT20GS60BRDQ1 APT2 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SKB06N60HS SKB06N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW50N60HS SGW50N60HS09 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技 IGBTs & DuoPacks - 20A 600V TO220 IGBT IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG http:// Infineon Technologies A...
|
IXDA20N120AS |
IGBT Discretes: NPT IGBT High Voltage IGBT
|
IXYS
|
SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软,恢复快反平行快恢复二极管(不扩散技术中的快速第S - IGBT技术)
|
SIEMENS AG
|
SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|