| PART |
Description |
Maker |
| AP89010 AP89021 |
Standard CMOS process
|
Aplus Intergrated Circuits
|
| AP89085 AP89170 |
Standard CMOS process
|
Aplus Intergrated Circuits
|
| AP89341 |
Standard CMOS process
|
Aplus Intergrated Circuits
|
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| MB85R256G |
256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
|
http://
|
| IDT6116LA IDT6116SA IDT6116SA20TDB IDT6116SA20SO I |
From old datasheet system
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOJ-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOIC-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, PDSO24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IDT7164S07 IDT7164LL25PG IDT7164LL25PGI IDT7164S20 |
8K X 8 STANDARD SRAM, 19 ns, PDSO28
8K X 8 STANDARD SRAM, 25 ns, PDIP28 0.600 INCH, PLASTIC, DIP-28
CMOS Static RAM 64K (8K x 8-Bit)
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
|
| LH534A00 LH534A00T |
CMOS 4M(512K X 8) Mask-Programmable ROM
CMOS 4M (512K x 8) MROM
Lens Cap; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
Sharp Electrionic Components
Sharp Corporation
|
| BS62LV1027 BS62LV1027PIP70 BS62LV1027SCG70 BS62LV1 |
Asynchronous 1M(128Kx8) bits Static RAM
LM5035 PWM Controller with Integrated Half-Bridge and SyncFET Drivers; Package: TSSOP EXP PAD; No of Pins: 20
LM5041A Cascaded PWM Controller; Package: TSSOP; No of Pins: 16
LM5041 Cascaded PWM Controller; Package: TSSOP; No of Pins: 16
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 55 ns, PDSO32
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 55 ns, PDIP32
Very Low Power/Voltage CMOS SRAM 非常低功电压的CMOS的SRAM
LM5033 100V Push-Pull Voltage Mode PWM Controller; Package: LLP; No of Pins: 10 128K X 8 STANDARD SRAM, 70 ns, PDSO32
LM5030 100V Push-Pull Current Mode PWM Controller; Package: LLP; No of Pins: 10 128K X 8 STANDARD SRAM, 55 ns, PDIP32
LM5030 100V Push-Pull Current Mode PWM Controller; Package: LLP; No of Pins: 10 128K X 8 STANDARD SRAM, 70 ns, PDIP32
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 70 ns, UUC
|
http://
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
BRILLIANCE SEMICONDUCTOR INC
|
| C1210 |
Process C1210 CMOS 1.2mm Zero Threshold Devices
|
IMP Inc
IMP[IMP, Inc]
IMP Inc
|
|
