| PART |
Description |
Maker |
| MCH6001 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| XN01212 |
Composite Device - Composite Transistors
Silicon NPN epitaxial planar type For switching/digital circuits
|
Panasonic Semiconductor
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| RT3Y97M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| RT3U22M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| RT3AMMM |
Composite Transistor
|
Isahaya Electronics Corporation
|
| RT3X99M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| XN01117 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Ricoh Co., Ltd.
|
| XP05501 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Honeywell International, Inc.
Panasonic
|
| XN0A312 XN1A312 |
Composite Device - Composite Transistors
From old datasheet system
|
Matsshita / Panasonic
|
