| PART |
Description |
Maker |
| BG5130R |
DUAL - N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| BF2030R BF2030W BF2030 |
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF965 |
Silicon N-Channel MOSFET Tetrode
|
Siemens
|
| BF5030R BF503009 BF5030W |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
Infineon Technologies A...
|
| BF998 BF998W BF998R |
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BG3130 BG3130R |
RF-MOSFET - Package:SOT363
RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF1005R BF1005W BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BF996SA BF996SB |
N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay
|
| BF988 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| Q62702-F1587 BF1012W |
From old datasheet system
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F1776 BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
