| PART |
Description |
Maker |
| TIM7179-25UL |
HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM5964-25UL TIM5964-25UL09 |
HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM5964-16UL TIM5964-16UL09 |
HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM7785-25UL |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM6472-4UL09 |
HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM5359-8UL |
HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz
|
Toshiba Semiconductor
|
| TIM7785-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| AWT6132R AWT6132RM5P8 AWT6132RM5P9 |
415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| AWT6136 AWT6136RM5P8 AWT6136M5P8 |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS[ANADIGICS, Inc]
|
| TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
