| PART |
Description |
Maker |
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| ZC831 ZC831A ZC831B ZC830 ZC830A ZC830B ZC836B ZC8 |
SOT23 SILICON VARIABLE CAPACITANCE DIODES
25 Volt hyperabrupt varactor diode
MS (MIL-C-5015)/97 SERIES 3108A SOLID SHELL ANGLE PLUGS, RIGHT ANGLE BODY STYLE, SOLDER TERMINATION, 22 SHELL SIZE, 22-2 INSERT ARRANGEMENT, PLUG GENDER, 3 CONTACTS 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
DIODES INC
|
| BB804 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 18 V, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS AG
Siemens Semiconductor Group
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
|
| HVC362TRF-E HVC317BTRF HVU200ATRU HVC358BTRF-E |
15 V, SILICON, VARIABLE CAPACITANCE DIODE
30 V, SILICON, VARIABLE CAPACITANCE DIODE
VHF BAND, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
| BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Johanson Dielectrics, Inc.
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| 1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1N5474 1N5448A 1N5443B 1N5447C 1N5445A 1N5476A JAN |
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM
C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| RKV651KL |
31.25 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for FM tuner IC
|
Renesas Electronics Corporation
|
| RKV606KP |
3.34 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
|
