PART |
Description |
Maker |
64001-0300 19130-0044 19130-0046 19154-0015 64001- |
Assorted Non-Insulated and PVC Insulated Quick Disconnect, Ring, Spade and Butt
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MolexKits http://
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19069-0209 19069-0241 19140-0035 19140-0090 19189- |
Assorted Non-Insulated .250" Quick Disconnect Ring, Spade, Butt Splice and Terminal Assorted Non-Insulated .250 Quick Disconnect Ring, Spade, Butt Splice and Terminal
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MolexKits http://
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8XL52 8XL54 87L54 87L52 87L58 8XL58 |
LOW VOLTAGE CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLERS FUSE KIT, ASSORTED; Depth, external:165mm; Height:50mm; Width, external:260mm
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Intel Corp.
|
19022-0018 19022-0022 64001-0100 64001-0200 19016- |
.110, .187 and .250 Tab Size Non-Insulated and PVC Insulated Quick Disconnect Solderless Terminals, With Universal Crimp Tool .110", .187" and .250" Tab Size Non-Insulated and PVC Insulated Quick Disconnect Solderless Terminals, With Universal Crimp Tool
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http:// MolexKits
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PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE FLAT-BASE TYPE INSULATED TYPE
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Mitsubishi Electric Semiconductor POWEREX[Powerex Power Semiconductors]
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IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠? 500V Discrete IGBT in a TO-3P (TO-247AC) package Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)
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International Rectifier, Corp.
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BCR16A BCR16B BCR16E BCR16C |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE MEDIUM POWER USE A B C : NON-INSULATED TYPE E : INSULATED TYPE GLASS PASSIVATION TYPE
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Infineon Technologies AG MITSUBISHI[Mitsubishi Electric Semiconductor]
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QM30E3Y-2H QM30E2Y-2H QM30E2Y |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
QM5HG-24 |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE MEDIUM POWER SWITCHING USE NON-INSULATED TYPE
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
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International Rectifier, Corp. IRF[International Rectifier]
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